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| --= --=i an AMP comDanv = RF MOSFET Power Transistor, 2OW, 28V 2 - 175 MHz Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices DU2820S Absolute Maximum Ratings at 25C Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation JunctionTemperature Storage Temperature Thermal Resistance 1 Symbol V 0s V GS 4,s p rJ TJ T STG 6JC 1 Rating 65 20 24 62.5 200 -55 to +150 2.8 t Units V V A W "C "C "Cl-W 1 J 1 4.04 1 4.55 7.39 [ I X59 .259 1 I .l79 291 I 1 K L 1 6.58 1 .I0 1 1 x5 1 404 1 Jo6 Electrical Characteristics I Parameter Drain-Source Drain-Source Gate-Source Breakdown Voltaae Leakage Current Leakage Current at 25C Symbol BV..,, `ass `GSS V 0sr-v GM C 15s C OS5 C RSS GP `70 VSWR-T 13 60 2.0 500 Min 65 Max 1.0 1.0 6.0 45 40 a 3O:l Units V mA fl V mS pF pF PF dB % V,.=O.O V, I,,=50 v,,=28.0 v, v,,=o.o mA v v Test Conditions vGs=20.0 v. v,,=o.o Gate Threshold Voltage ForwardTransconductance Input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load MismatchTolerance Specifications VDs=l 0.0 V, IDS=1 00.0 mA V&O.0 v,,=28.0 V,,=28.0 V,,=28.0 V, 1,,=100.0 mA, AV,,=l v, F=l .o MHZ V, F=l .O MHz V, F=l .O MHz mA, P,,f20 W, F=175 MHz MHz MHz .O V, 80 ps Pulse vD,=2a.o V, I,,=100 v,,=28.0 v,,=28.0 v, I,,=100 mA, PO,=20 W, F=l75 V. I,,=1 00 mA, P,,1=;20 W, F=l75 Subject to Change Without Notice. M/A-COM, Inc. North America: Tel. Fax (800) (800) 366-2266 618-8883 m Asia/Pacific: Tel. Fax t81 +81 (03) (03) 3226-1671 3226-1451 n Europe: Tel. Fax +44 (1344) +44 (1344) 869 595 300 020 RF MOSFET Power Transistor, 2OW, 28V DU2820S v2.00 Typical Broadband Performance Curves GAIN vs FREQUENCY 20 EFFICIENCY vs FREQUENCY W V,,=28 V I,,=1 00 mA Poe20 V,,=28 V I,,=1 00 mA PO,,,.=20 W 25 s z. t20 s 15 - . 10 0 25 50 FREQUENCY 1W 150 2cQ 0 25 (MHz) 50 FREQUENCY 100 (MHz) 150 230 POWER OUTPUT vs POWER INPUT 3or I',,=28 V IDo= 00 mA 1 200 MHz 0 0.2 0.4 0.6 0.6 1 1.2 1.4 1.6 1.7 POWER INPUT(W) Specifications Subject to Change Without Notice. MIA-COM, Inc. Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 H Europe: Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020 North America: Tel. (800) 366-2266 Fax (800) 618-8883 n RF MOSFET Power Transistor, 2OW, 28V DU2820S v2.00 Typical Device Impedance Frequency (MHz) 30 z, (OHMS) 17.5 -j 13.0 1 15.0 -j 15.5 8.0 - j 14.0 5.5 - j 8.0 I',,=28 V, I,,=100 mA, P,,,=20 Watts ( &,, (OHMS) 16.O+i2.5 15.Q+j4.0 12.0 + j 6.0 9.25 + j 6.0 I 50 100 7 200 Z,, is the series equivalent input impedance of the device. Z LOAD the series equivalent load impedance as measured from drain to ground. is RF Test Fixture VDS = 28 VOLTS IDCI = lOOmA VGS J3 VDS J4 P ii--L2 t C61 c71 In c3 RF OUT J2 - RF IN Jl Cl PARTS LIST Cl ,c3 c2,C4 C5C6 c7 C8 c9 Ll.L3 TRIMMER CAPACITOR 5-8OpF TRIMMER CAPACITOR 3-3OpF CAPACITOR 0.01 IJF CAPACITOR 0.001 UF CAPACITOR 5.6pF CAPACITOR 1OpF 2 TURNS OF NO. 20 ENAMEL WIRE ON `0.25' CLOSE WOUND L2 7 TURNS OF NO. 20 ENAMEL WIRE ON `025' CLOSE WOUND Rl Ql BOARD RESISTOR 1OOKOHMS DlJ2820S FR4 0.062 Specifications Subject to Change Without Notice. WUA-COM, Inc. North America: Tel. (800) 366-2266 Fax (800) 618-8883 m Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03)3226-1451 l Europe: Tel. +44 (1344)869 595 Fax +44(1344)300 020 |
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